* (1) Suitable for use with a 5 V signal line. (VRWM ≤ 5.5 V) (2) Protects devices with its high ESD performance. (VESD = ±12 kV (Contact), VESD = ±15 kV (Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.7 Ω (typ.)) (4) Compact
DF2B7M3SL Datasheet (323.83 KB)
DF2B7M3SL
Toshiba ↗ Semiconductor
323.83 KB
Esd protection diodes.
ESD Protection Diodes Silicon Epitaxial Planar DF2B7M3SL DF2B7M3SL 1. General The DF2B7M3SL is a TVS diode (ESD protection diode) protects semicondu.
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