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HN7G05FU - Power Management Switch Applications

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HN7G05FU TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G05FU Unit: mm Power Management Switch Applications, Inverter Circuit Applications, Driver Circuit Applications and Interface Circuit Applications Q1 (transistor): RN2301 equivalent Q2 (MOSFET): 2SK1830 equivalent Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −10 −100 Unit V V V mA JEDEC ― ― 2-2J1E Q2 (MOSFET) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA JEITA TOSHIBA Weight: 0.0068 g (typ.
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