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HN7G10FE - Power Management Switch Applications

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HN7G10FE TOSHIBA Multichip Discrete Device www.DataSheet4U.com HN7G10FE Unit: mm Power Management Switch Applications Driver Circuit Applications Interface Circuit Applications • • Q1 (transistor): 2SC5376F equivalent Q2 (MOSFET): SSM3K03FE equivalent Q1 (transistor) Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB Rating 15 12 5 400 50 Unit V V V mA mA 1. 2. 3. 4. 5. 6. EMITTER BASE DRAIN SOURCE GATE COLLECTOR Q2 (MOSFET) Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA JEDEC JEITA TOSHIBA ― ― 2-2J1A Weight: 0.003 g (typ.
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