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J377 Toshiba (https://www.toshiba.com/) Semiconductor 2SJ377

Description www.DataSheet.co.kr 2SJ377 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L −π−MOSV) 2 2SJ377 5.2 ± 0.2 1.5 ± 0.2 Relay Drive, DC/DC Converter and Motor Drive Applications z 4 V gate drive z Low drain-source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.16 Ω (typ.) 1.2 MAX. Unit: mm 6.5 ± 0.2 0.6 MAX. : IDSS = −100 μA (ma...
Features 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-7J1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, et...

Datasheet PDF File J377 Datasheet - 464.60KB

J377  






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