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J512 Toshiba (https://www.toshiba.com/) Semiconductor Silicon P Channel MOS Type Field Effect Transistor

Description 2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) 2SJ512 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 3.7 S (typ.) l Low leakage current : IDSS = −100 µA (max) (VDS = −250 V) l Enhancement−mode : Vth = −1.5~−3.5 V (VDS = −10 V, ID = −1 m...
Features mbol Max Unit Thermal resistance, channel to case Thermal resistance, channel to ambient Rth (ch−c) Rth (ch−a) 4.16 62.5 °C / W °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: VDD = −50 V, Tch = 25°C (initial), L = 10.5 mH, RG = 25 Ω, IAR = −5 A Note 3: Repetitive rating; Pulse width limited ...

Datasheet PDF File J512 Datasheet - 269.94KB

J512  






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