• Part: J512
  • Description: Silicon P Channel MOS Type Field Effect Transistor
  • Manufacturer: Toshiba
  • Size: 269.94 KB
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Datasheet Summary

2SJ512 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- π- MOSV) 2SJ512 Chopper Regulator, DC- DC Converter and Motor Drive Applications Unit: mm l Low drain- source ON resistance : RDS (ON) = 1.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 3.7 S (typ.) l Low leakage current : IDSS = - 100 µA (max) (VDS = - 250 V) l Enhancement- mode : Vth = - 1.5~- 3.5 V (VDS = - 10 V, ID = - 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalenche energy (Note...