| Description | JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV ○ For wave detection ¾ Small package 0.22±0.05 1.2±0.05 0.32±0.05 3 0.13±0.05 1. ANODE1 2. CATHODE2 3. CATHODE1/ANODE2 0.8±0.05 Unit: mm 1.2±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 4 25 125 −55~125 ... |
| Features |
rt and estimated failure rate, etc).
VESM
JEDEC JEITA TOSHIBA
0.5±0.05
V
― ― 1-2S1C
Weight:0.0015g(typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic Forward voltage Forward current Reverse current Capacitance Symbol VF IF IR IF = 2 mA VF = 0.5 V VR = 0.5 V Test Condition
Min
⎯ 25 ⎯ ⎯
Typ.
0.25 ⎯ ⎯ 0.6
Max
⎯ ⎯ 25 ⎯
Unit
V mA uA ...
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| Datasheet |
 JDH3D01FV Datasheet - 181.09KB |
