JDH3D01FV Datasheet - Toshiba Semiconductor

JDH3D01FV Diode Silicon Epitaxial Schottky Barrier Type

JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV ○ For wave detection ¾ Small package 0.22±0.05 1.2±0.05 0.32±0.05 3 0.13±0.05 1. ANODE1 2. CATHODE2 3. CATHODE1/ANODE2 0.8±0.05 Unit: mm 1.2±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 4 25 125 55~125 Unit 0.8±0.05 0.4 0.4 1 2 mA °C °C Note: Using continuously under heavy loads (e.g. the.

JDH3D01FV_ToshibaSemiconductor.pdf