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JDH3D01FV
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH3D01FV
○ For wave detection
¾ Small package
0.22±0.05 1.2±0.05 0.32±0.05 3 0.13±0.05 1. ANODE1 2. CATHODE2 3. CATHODE1/ANODE2 0.8±0.05
Unit: mm
1.2±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 4 25 125 −55~125 Unit
0.8±0.05
0.4 0.4
1 2
mA °C °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
JDH3D01FV Datasheet
