Datasheet4U Logo Datasheet4U.com

JDP2S01S - UHF~VHF Band RF Attenuator Applications

📥 Download Datasheet

Datasheet preview – JDP2S01S

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor
  • JDP2S01S - UHF~VHF Band RF Attenuator
  • JDP2S01AFS - TOSHIBA Diode Silicon Epitaxial PIN Type
  • JDP2S01AFS - Diode
  • JDP2S01E - UHF~VHF Band RF Attenuator Applications
  • JDP2S01E - UHF~VHF Band RF Attenuator
  • JDP2S01T - UHF~VHF Band RF Attenuator Applications
  • JDP2S01U - UHF~VHF Band RF Attenuator Applications
  • JDP2S02ACT - UHF~VHF Band RF Switch Applications

Full PDF Text Transcription

Click to expand full text
JDP2S01S TOSHIBA Diode Silicon Epitaxial PIN Type www.DataSheet4U.com JDP2S01S UHF~VHF Band RF Attenuator Applications Unit: mm · · · Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Low series resistance: rs = 0.65Ω(typ.) Low capacitance: CT = 0.65 pF (typ.) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 30 50 150 −55~150 Unit V mA °C °C JEDEC JEITA TOSHIBA ― ― 1-1K1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Forward voltage Capacitance Series resistance Symbol VR IR VF CT rs Test Condition IR = 10 µA VR = 30 V IF = 50 mA VR = 1 V, f = 1 MHz IF = 10 mA, f = 100 MHz Weight: 0.
Published: |