JDP2S04E Datasheet | Toshiba

TOSHIBA Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications - - - Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. Low capacitance ratio: CT = 0.25 p F (typ.) Low series resistance: rs = 3 Ω (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 50 50 125 -55~125 Unit V m A °C °C JEDEC JEITA TOSHIBA ― ― 1-1G1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Forward voltage Capacitance Series resistance Symbol VR IR VF CT rs IR = 10 m A VR = 50 V IF = 50 m A VR = 50 V, f = 1 MHz IF = 10 m A, f = 100 MHz Test Condition Weight: 0.0014 g (typ.) Min 50 ¾ ¾ ¾ ¾ Typ. ¾ ¾ 0.95 0.25 3.0 Max ¾ 0.1 1.0 0.4 ¾ Unit V m A V p F W Note: Signal level when capacitance is measured: Vsig = 20 m Vrms Marking 2003-03-24 2003-03-24 RESTRICTIONS ON PRODUCT USE 000707EAA - TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to ply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. - The TOSHIBA products listed in this document are intended for...