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JDV2S10S
TOSHIBA DIODE Silicon Epitaxial Planar Type
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JDV2S10S
VCO for UHF Band Radio
• • • High Capacitance Ratio : C0.5V/C2.5V = 2.5 (typ.) Low Series Resistance : rs = 0.35 Ω (typ.) This device is suitable for use in a small-size tuner.
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C0.5V C2.5V C0.5V/C2.5V rs IR = 1 µA VR = 10 V VR = 0.5 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 1 V, f = 470 MHz Test Condition
Weight: 0.0011 g
Min 10 7.3 2.75 2.4
Typ. 2.5 0.35
Max 3 8.4 3.4 0.
JDV2S10S Datasheet
