Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K1529. For precise diagrams, tables, and layout, please refer to the original PDF.
2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application l High breakdown voltage l High forward transfer admittance l ...
View more extracted text
ication l High breakdown voltage l High forward transfer admittance l Complementary to 2SJ200 : VDSS = 180V : |Yfs| = 4.0 S (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Gate−source voltage Drain current (Note 1) Symbol VDSS VGSS ID PD Tc Tstg Rating 180 ±20 10 120 150 −55~150 Unit V V A W °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range Marking Type ※ Lot Number Month (starting from alphabet A) Year (last number of the christian era) JEDEC JEITA TOSHIBA ― ― 2-16C1B K1529 ※ Weight: 4.6 g (typ.
K1529 Datasheet
