K192A Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK192A FM Tuner Applications VHF Band Amplifier Applications 2SK192A Unit: mm - High power gain: GPS = 24d B (typ.) (f = 100 MHz) - Low noise figure: NF = 1.8d B (typ.) (f = 100 MHz) - High forward transfer admittance: |Yfs| = 7 m S (typ.) (f = 1 k Hz) Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -18 10 200 125 -55~125 Unit V m A m W °C °C Electrical Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-4E1D Weight: 0.13 g (typ.) Characteristics Symbol Test Condition Gate leakage current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure IGSS VGS = -1.0 V, VDS = 0 V (BR) GDO IG = -100 m A IDSS (Note) VGS = 0, VDS = 10 V VGS (OFF) VDS = 10 V, ID = 1 m A ïYfsï VGS = 0, VDS = 10 V, f = 1 k Hz Ciss Crss...