K2200
2SK2200
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2- π- MOSV)
2SK2200
Chopper Regulator, DC- DC Converter and Motor Drive Applications
Unit: mm z 4-V gate drive z Low drain- source ON resistance : RDS (ON) = 0.28 Ω (typ.) z High forward transfer admittance : |Yfs| = 3.5 S (typ.) z Low leakage current
: IDSS = 100 μA (max) (VDS = 100 V) z Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
IAR EAR Tch Tstg
100 100 ±20
3 12 1.3
3 0.13 150
- 55~150
V V V A A W m J
A m J °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-8M1B
Weight: 0.54 g...
