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2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) www.DataSheet4U.com 2SK2599 Unit: mm : RDS (ON) = 2.9 Ω (typ.) : |Yfs| = 1.7 S (typ.) Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 2 5 12 1.3 112 2 0.
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