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2SK2605
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2605
Switching Regulator Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.)
z High forward transfer admittance : |Yfs| = 3.8 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 640 V)
z Enhancement mode
: Vth = 2.0~4.
K2605 Datasheet
