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K2613 - 2SK2613

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www.DataSheet4U.com 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications Unit: mm · Low drain-source ON resistance: RDS (ON) = 1.4 Ω (typ.) · High forward transfer admittance: ïYfsï = 6.0 S (typ.) · Low leakage current: IDSS = 100 µA (max) (VDS = 800 V) · Enhancement-model: Vth = 2.0~4.
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