• Part: K2789
  • Manufacturer: Toshiba
  • Size: 262.01 KB
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K2789 Description

2SK2789 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2789 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.) l High forward transfer admittance.

K2789 Key Features

  • 4 V gate drive
  • Low drain−source ON resistance : RDS (ON) = 66 mΩ (typ.)
  • High forward transfer admittance : |Yfs| = 16 S (typ.)
  • Low leakage current : IDSS = 100 µA (max) (VDS = 100 V)
  • Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drai