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Toshiba Electronic Components Datasheet

K2967 Datasheet

2SK2967

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2SK2967
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2967
DCDC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 48 m(typ.)
z High forward transfer admittance : |Yfs| = 30 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 250 V)
www.DataSheetz4U.cEonmhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
250
250
±20
30
120
150
925
30
15
150
55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.833
50
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.74 mH, IAR = 30 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-11-21


Toshiba Electronic Components Datasheet

K2967 Datasheet

2SK2967

No Preview Available !

Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cutoff current
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
www.DataSheet4U.cRoemverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 250 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 15 A
VDS = 10 V, ID = 15 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Switching time
Turnon time
Fall time
ton
tf
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) Charge
toff
Qg
Qgs VDD 200 V, VGS = 10 V, ID = 30 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 30 A, VGS = 0 V
IDR = 30 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
2SK2967
Min Typ. Max Unit
— — ±10 μA
— — 100 μA
250 —
V
1.5 — 3.5
— 48 68
15 30 —
— 5400 —
— 580 —
— 1900 —
V
m
S
pF
— 20 —
— 50 —
ns
— 35 —
— 200 —
— 132 —
— 80 —
— 52 —
nC
Min Typ. Max Unit
— — 30 A
— — 120 A
— — 2.0 V
— 270 —
ns
— 3.0 — μC
TOSHIBA
K2967
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-21


Part Number K2967
Description 2SK2967
Maker Toshiba Semiconductor
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K2967 Datasheet PDF





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