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Toshiba Electronic Components Datasheet

K3669 Datasheet

2SK3669

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K3669 pdf
2SK3669
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VII)
2SK3669
Switching Regulator, Audio Amplifier and Motor Drive
Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 95 m(typ.)
High forward transfer admittance: |Yfs| = 6 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 100 V)
www.DataSheet4U.cEonmhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
DC (Note 1)
Drain current
Pulse (tw 10 ms)
(Note 1)
Pulse (tw 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy
(Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
IDP
PD
EAS
IAR
EAR
Tch
Tstg
100
100
±20
10
15
28
20
280
10
2
150
55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (chc)
Rth (cha)
6.25
125
°C/ W
°C/ W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 3.44 mH, IAR = 10 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-20


Toshiba Electronic Components Datasheet

K3669 Datasheet

2SK3669

No Preview Available !

K3669 pdf
Electrical Characteristics (Ta = 25°C)
2SK3669
Characteristic
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
www.DataSheet4U.com
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Symbol
Test Condition
Min
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±16 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 5 A
VDS = 10 V, ID = 5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
100
3.0
3
tr 10 V
VGS
ton 0 V
ID = 10 A VOUT
tf
VDD 50 V
toff Duty 1%, tw = 10 μs
Typ. Max
⎯ ±100
100
⎯⎯
5.0
95 125
6
480
9
220
2
12
2
12
Unit
nA
μA
V
V
mΩ
S
pF
ns
Qg
VDD 80 V, VGS = 10 V,
Qgs ID = 10 A
Qgd
8.0
5.6 nC
2.4
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(tw 10 ms) (Note 1)
Pulse drain reverse current
(tw 1 ms) (Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
IDRP
VDS2F
trr
Qrr
Test Condition
IDR1 = 10 A, VGS = 0 V
IDR = 10 A, VGS = 0 V,
dIDR/dt = 50 A/μs
Min Typ. Max Unit
⎯ ⎯ 10 A
⎯ ⎯ 15 A
⎯ ⎯ 28 A
⎯ −1.7
V
65 ns
90 nC
Marking
K3669
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-20


Part Number K3669
Description 2SK3669
Maker Toshiba Semiconductor
Total Page 6 Pages
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