K3797 - 2SK3797

Datasheet Details

Part number	K3797
Manufacturer	Toshiba Electronic Devices & Storage
File Size	243.44 KB
Description	2SK3797
Datasheet	K3797 Datasheet
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2SK3797 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) www.DataSheet4U.com 2SK3797 Unit: mm Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) High forward transfer admittance: |Yfs| = 7.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 600 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 13 52 50 1033 13 5.

Published: Feb 10, 2009 |