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K3798 - 2SK3798

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Part number K3798
Manufacturer Toshiba
File Size 357.71 KB
Description 2SK3798
Datasheet download datasheet K3798 Datasheet
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2SK3798 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) www.DataSheet4U.com 2SK3798 Unit: mm Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 2.5Ω (ty p.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 720 V) Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Sy Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC ( Drain current Note 1) mbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 4 12 40 W 345 4 4.
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