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Toshiba Electronic Components Datasheet

K3799 Datasheet

2SK3799

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2SK3799
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
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2SK3799
Switching Regulator Applications
z Low drain-source ON resistance
: RDS (ON) = 1.0 Ω (typ.)
z High forward transfer admittance : |Yfs| = 6.0 S (typ.)
z Low leakage current : IDSS = 100μA (max) (VDS = 720 V)
z Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
8
24
50
1080
8
5
150
55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1. Gate
2. Drain
3. Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
2.5 °C / W
62.5 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 30.9 mH, RG = 25Ω, IAR = 8 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Handle with care.
1
3
1 2006-11-13
Free Datasheet http://www.datasheet4u.net/


Toshiba Electronic Components Datasheet

K3799 Datasheet

2SK3799

No Preview Available !

Electrical Characteristics (Ta = 25°C)
www.DataSheCeht4aUra.ccotemristic
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Symbol
Test Condition
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
IG = ±10 μA, VGS = 0 V
VDS = 720 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 4 A
VDS = 15 V, ID = 4 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
10 V
VGS
Turn-on time
ton
0V
Switching time
Fall time
tf
ID = 4 A Output
VDD 400 V
Turn-off time
Total gate charge (Gate-source
plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
toff Duty 1%, tw = 10 μs
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 8 A
Qgd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 8 A, VGS = 0 V
IDR = 8 A, VGS = 0 V
dlDR / dt = 100 A / μS
Marking
2SK3799
Min Typ. Max Unit
— — ±10
±30 —
— — 100
450 —
2.0 — 4.0
— 1.0 1.3
3.5 6.0
— 2200 —
— 45 —
— 190 —
μA
V
μA
V
V
Ω
S
pF
— 25 —
— 65 —
ns
— 20 —
— 120 —
— 60 —
— 34 —
— 26 —
nC
Min Typ. Max Unit
—— 8
A
— — 24 A
1.7
V
— 1700 —
ns
— 23 — μC
K3799
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-13
Free Datasheet http://www.datasheet4u.net/


Part Number K3799
Description 2SK3799
Maker Toshiba Semiconductor
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K3799 Datasheet PDF





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