TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
Switching Regulator Applications
z Low drain-source ON resistance
: RDS (ON) = 1.0 Ω (typ.)
z High forward transfer admittance : |Yfs| = 6.0 S (typ.)
z Low leakage current : IDSS = 100μA (max) (VDS = 720 V)
z Enhancement model : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Drain-gate voltage (RGS = 20 kΩ)
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
Repetitive avalanche energy (Note 3)
Storage temperature range
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal resistance, channel to case
Thermal resistance, channel to
2.5 °C / W
62.5 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 30.9 mH, RG = 25Ω, IAR = 8 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Handle with care.
Free Datasheet http://www.datasheet4u.net/