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K4012 - 2SK4012

Features

  • for use in general electronics.

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Full PDF Text Transcription

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2SK4012 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK4012 Switching Regulator Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 0.33 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.
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