K4012 Overview
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK4012 Switching Regulator Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 0.33 Ω (typ.) z High forward transfer admittance.
| Part number | K4012 |
|---|---|
| Datasheet | K4012-ToshibaSemiconductor.pdf |
| File Size | 213.25 KB |
| Manufacturer | Toshiba |
| Description | 2SK4012 |
|
|
|
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK4012 Switching Regulator Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 0.33 Ω (typ.) z High forward transfer admittance.
| Part Number | Description |
|---|---|
| K4013 | 2SK4013 |
| K4017 | Silicon N-Channel MOS Type FET |
| K4003 | 2SK4003 |
| K4021 | 2SK4021 |