K4012
2SK4012
..
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK4012
Switching Regulator Applications
Unit: mm z Low drain- source ON-resistance
: RDS (ON) = 0.33 Ω (typ.) z High forward transfer admittance
: |Yfs| = 8.5 S (typ.) z Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain- source voltage
Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
IAR EAR Tch Tstg
500 500 ±30 13 52 45
13 4.5 150
- 55 to 150
V V V A A W m J
A m J °C °C
1: Gate 2: Drain 3: Source
JEDEC
―
JEITA
SC-67...
