Datasheet Details
| Part number | MG150Q2YS65H |
|---|---|
| Manufacturer | Toshiba |
| File Size | 190.00 KB |
| Description | High Power & High Speed Switching Applications |
| Datasheet |
 MG150Q2YS65H Datasheet
|
|
|
| Part number | MG150Q2YS65H |
|---|---|
| Manufacturer | Toshiba |
| File Size | 190.00 KB |
| Description | High Power & High Speed Switching Applications |
| Datasheet |
MG150Q2YS65H Datasheet
|
|
|
|
MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Applications Unit: mm · High input impedance · Enhancement-mode · The electrodes are isolated.
| Part Number | Description |
|---|---|
| MG150J1ZS50 | Silicon N Channel IGBT |
| MG150J7KS60 | GTR MODULE SILICON N CHANNEL IGBT |
| MG15C4MNI | OUT LINE BQUIVALRN |
| MG100Q2YS1 | Silicon N-Channel IGBT |