MIG20J503H - Intelligent Power Module

Toshiba Semiconductor

Datasheet Details

Part number	MIG20J503H
Manufacturer	Toshiba Semiconductor
File Size	372.10 KB
Description	Intelligent Power Module
Datasheet	MIG20J503H-ToshibaSemiconductor.pdf

Pin No.

The 4th generation trench gate thin wafer NPT IGBT is adopted.
FRD is built in.
The level shift circuit by high-voltage IC is built in.
The simplification of a high side driver power supply is possible by the bootstrap system.
Short circuit protection, over temperature protection, and the power supply under voltage protection function are built in.
Short circuit protection and over temperature protection state are outputted.
T.

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Published: Sep 3, 2015 |