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MP4208
TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2-π-MOSV in One)
MP4208
High Power High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
• • • • • • −4 V gate drive available Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 0.2 Ω (typ.) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = −100 µA (max) (VDS = −60 V) Enhancement-mode: Vth = −0.8 to −2.
MP4208 Datasheet
