Datasheet4U Logo Datasheet4U.com

MP4412 - N-Channel Power MOSFET

Features

  • >.

📥 Download Datasheet

Datasheet preview – MP4412

📁 Similar Datasheet

  • MP4415A - Synchronous Step-Down Converter (MPS)
  • MP44010 - Boundary Mode PFC Controller (MPS)
  • MP44010HS - Boundary Mode PFC Controller (MPS)
  • MP44014 - Boundary Mode PFC Controller (MPS)
  • MP44014GS - Boundary Mode PFC Controller (MPS)
  • MP4420H - Synchronous Step-Down Converter (MPS)
  • MP4420HGJ - Synchronous Step-Down Converter (MPS)
  • MP4423H - Synchronous Step Down Converter (MPS)
  • MP4423HGQ - Synchronous Step Down Converter (MPS)
  • MP4425A - Step-Down LED Driver (MPS)
Other Datasheets by Toshiba Semiconductor
  • MP4410 - N-Channel Power MOSFET
  • MP4411 - N-Channel Power MOSFET
  • MP4401 - N-Channel Power MOSFET
  • MP4403 - N-Channel Power MOSFET
  • MP4005 - Power Transistor
  • MP4013 - TOSHIBA Power Transistor Module
  • MP4020 - Power Transistor
  • MP4021 - Power Transistor

Full PDF Text Transcription

Click to expand full text
MP4412 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV inOne) MP4412 High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • • • • • • • 4-V gate drivability Small package by full molding (SIP 12 pins) High drain power dissipation (4-device operation) : PT = 28 W (Tc = 25°C) Low drain-source ON resistance: RDS (ON) = 0.17 Ω (typ.) High forward transfer admittance: |Yfs| = 4.5 S (typ.) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 100 V) Enhancement-mode: Vth = 0.8 to 2.
Published: |