MT3S05T - TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE

Toshiba

Datasheet Details

Part number	MT3S05T
Manufacturer	Toshiba
File Size	107.35 KB
Description	TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
Datasheet	MT3S05T Datasheet

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www.DataSheet4U.com MT3S05T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S05T VHF~UHF Band Low Noise Amplifier Applications · · · Sutable for use in an OSC Low noise figure NF = 1.4dB Excellent collector current linearity |S21e|2 = 8.5dB (@1 V/5 mA/1 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 10 5 2 40 10 100 125 -55~125 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-1B1A g (typ.) Marking 3 Weight: T 1 K 2 1 2002-01-23 www.DataSheet4U.