MT3S05T Description
¾ ¾ ¾ 0.9 Max 0.1 1 140 1.25 Unit mA mA ¾ pF Note: Cre is measured by 3 terminal method with capacitance bridge. Caution This device electrostatic sensitivity.
MT3S05T Datasheet
| Part number | MT3S05T |
|---|---|
| Download | MT3S05T Datasheet (PDF) |
| File Size | 107.35 KB |
| Manufacturer | Toshiba |
| Description | TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
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