MT3S05T Datasheet | Toshiba

.. TOSHIBA Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications - - - Sutable for use in an OSC Low noise figure NF = 1.4d B Excellent collector current linearity |S21e|2 = 8.5d B (@1 V/5 m A/1 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 10 5 2 40 10 100 125 -55~125 Unit V V V m A m A m W °C °C JEDEC JEITA TOSHIBA ― ― 2-1B1A g (typ.) Marking Weight: 2002-01-23 .. Microwave Characteristics (Ta = 25°C) Characteristics Transition frequency Insertion gain Noise figure Symbol f T |S21e| (1) |S21e| (2) NF 2 2 Test Condition VCE = 1 V, IC = 5 m A VCE = 1 V, IC = 5 m A, f = 1 GHz VCE = 3 V, IC = 20 m A, f = 1 GHz VCE = 1 V, IC = 5 m A, f = 1 GHz Min 2 ¾ 8.5 ¾ Typ. 4.5 8.5 11.5 1.4 Max ¾ ¾ ¾ 2.2 Unit GHz d B d B Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Symbol ICBO IEBO h FE Cre Test Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 m A VCB = 1 V, IE = 0, f = 1 MHz (Note) Min ¾ ¾ 80 ¾ Typ. ¾ ¾ ¾ 0.9 Max 0.1 1 140 1.25 Unit m A m A ¾ p F Note: Cre is measured by 3 terminal method with capacitance bridge. Caution This device electrostatic sensitivity. Please handle with caution. 2002-01-23 .. RESTRICTIONS ON PRODUCT...