• Part: MT3S08T
  • Description: SILICON NPN EPITAXIAL PLANAR TYPE
  • Manufacturer: Toshiba
  • Size: 106.06 KB
Download MT3S08T Datasheet PDF
MT3S08T page 2
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MT3S08T page 3
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Datasheet Summary

.. TOSHIBA Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications - - Sutable for use in an OSC Low noise figure NF = 1.4dB |S21e|2 = 10.5dB (@1 V/5 mA/1 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 8 1.5 40 10 100 125 -55~125 Unit V V V mA mA mW °C °C JEDEC JEITA ― ― 2-1B1A g (typ.) Marking TOSHIBA Weight: 2002-01-23 .. Microwave...