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MT3S106FS Datasheet Silicon-Germanium NPN Epitaxial Planar Type Transistor

Manufacturer: Toshiba

Datasheet Details

Part number MT3S106FS
Manufacturer Toshiba
File Size 138.84 KB
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Datasheet download datasheet MT3S106FS Datasheet

Overview

MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier.

Key Features

  • Low Noise Figure :NF=1.2dB (@f=2GHz).
  • High Gain:|S21e|2=10dB (@f=2GHz) Marking 3 41 2 1 +0.02 -0.04 0.6 ±0.05 0.35±0.05 0.15±0.05 Unit:mm 1.0±0.05 0.8±0.05 1 3 0.1±0.05 2 0.1±0.05 0.2±0.05 0.48 0.1±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC(Note 1).