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MT3S111P - Silicon-Germanium NPN Epitaxial Planar Type Transistor

Toshiba Semiconductor

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Datasheet Details

Part number	MT3S111P
Manufacturer	Toshiba Semiconductor
File Size	200.39 KB
Description	Silicon-Germanium NPN Epitaxial Planar Type Transistor
Datasheet	MT3S111P-ToshibaSemiconductor.pdf

MT3S111P Product details

Features

Low-Noise Figure: NF=0.95 dB (typ. ) (@f=1 GHz).
High Gain: |S21e|2=10.5 dB (typ. ) (@f=1 GHz) Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit PW-Mini JEDEC ⎯ JEITA SC-62.

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Published: Jun 14, 2016 |