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MT3S111TU - Silicon-Germanium NPN Epitaxial Planar Type Transistor

Toshiba Semiconductor

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Datasheet Details

Part number	MT3S111TU
Manufacturer	Toshiba Semiconductor
File Size	355.03 KB
Description	Silicon-Germanium NPN Epitaxial Planar Type Transistor
Datasheet	MT3S111TU-ToshibaSemiconductor.pdf

MT3S111TU Product details

Features

Low-Noise Figure: NF=0.85 dB (typ. ) (@ f=1 GHz).
High Gain: |S21e|2=12.5 dB (typ. ) (@ f=1 GHz) 2.0±0.1 0.65±0.05 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 0.166±0.05 0.7±0.05 Marking 3 R5 1 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit 1. BASE 2.

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Published: Jun 14, 2016 |