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MT3S113P - Silicon-Germanium NPN Epitaxial Planar Type Transistor

Toshiba Semiconductor

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Datasheet Details

Part number	MT3S113P
Manufacturer	Toshiba Semiconductor
File Size	223.15 KB
Description	Silicon-Germanium NPN Epitaxial Planar Type Transistor
Datasheet	MT3S113P-ToshibaSemiconductor.pdf

MT3S113P Product details

Features

Low Noise Figure:NF = 1.15dB (typ. ) (@ f=1GHz).
High Gain:|S21e|2 = 10.5dB (typ. ) (@ f=1GHz) Marking R7 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Pw-Mini JEDEC - JEITA SC-62.

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Published: Jun 14, 2016 |