MT3S113P transistor equivalent, silicon-germanium npn epitaxial planar type transistor.
* Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz)
* High Gain:|S21e|2 = 10.5dB (typ.) (@ f=1GHz)
Marking
R7
Absolute Maximum Ratings (Ta = 25°C)
Characteristic.
Unit: mm
FEATURES
* Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz)
* High Gain:|S21e|2 = 10.5dB (typ.) (@ f=1G.
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