Datasheet4U Logo Datasheet4U.com

MT3S113P Datasheet Silicon-Germanium NPN Epitaxial Planar Type Transistor

Manufacturer: Toshiba

📥 Download Datasheet

Datasheet Details

Part number MT3S113P
Manufacturer Toshiba
File Size 223.15 KB
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Download MT3S113P Download (PDF)

Overview

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit:.

Key Features

  • Low Noise Figure:NF = 1.15dB (typ. ) (@ f=1GHz).
  • High Gain:|S21e|2 = 10.5dB (typ. ) (@ f=1GHz) Marking R7 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Pw-Mini JEDEC - JEITA SC-62.

More Datasheets from Toshiba

Part Number Description
MT3S113 Silicon-Germanium NPN Epitaxial Planar Type Transistor
MT3S113TU Silicon-Germanium NPN Epitaxial Planar Type Transistor
MT3S111 Silicon-Germanium NPN Epitaxial Planar Type Transistor
MT3S111P Silicon-Germanium NPN Epitaxial Planar Type Transistor
MT3S111TU Silicon-Germanium NPN Epitaxial Planar Type Transistor
MT3S11FS Silicon NPN Epitaxial Planar Type Transistor
MT3S11T Silicon NPN Epitaxial Planar Type Transistor
MT3S106FS Silicon-Germanium NPN Epitaxial Planar Type Transistor
MT3S107FS Silicon-Germanium NPN Epitaxial Planar Type Transistor
MT3S108FS Silicon-Germanium NPN Epitaxial Planar Type Transistor