MT3S19R - Silicon NPN Epitaxial Planar Type Transistor

Toshiba Semiconductor

Datasheet Details

Part number	MT3S19R
Manufacturer	Toshiba Semiconductor
File Size	155.69 KB
Description	Silicon NPN Epitaxial Planar Type Transistor
Datasheet	MT3S19R-ToshibaSemiconductor.pdf

Low Noise Figure:NF=1.5dB(Typ. ) (@ f=1GHz).
High Gain:|S21e|2=13dB(Typ. ) (@ f=1GHz) Marking 3 1.8±0.1 0.05　M A 0.42+-00..0058 3 Unit: mm 0.17 +0.08 -0.07 2.4±0.1 1 0.95 2 0.95 2.9±0.2 A 0.8 -+00..0058 T6 12 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature r.

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Published: Jun 14, 2016 |