MT6L58AT - Silicon NPN Epitaxial Planar Type Transistor

Toshiba

Datasheet Details

Part number	MT6L58AT
Manufacturer	Toshiba
File Size	86.01 KB
Description	Silicon NPN Epitaxial Planar Type Transistor
Datasheet	MT6L58AT Datasheet

Other Datasheets by Toshiba

Part Number	Description
MT6L58AE	TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
MT6L58AFS	VHF-UHF Band Low Noise Amplifier Application
MT6L52AE	VHF-UHF Band Low Noise Amplifier Applications
MT6L53S	VHF-UHF Band Low Noise Amplifier Application
MT6L54E	VHF-UHF Band Low Noise Amplifier Application
MT6L55E	VHF-UHF Band Low Noise Amplifier Application
MT6L55FS	VHF-UHF Band Low Noise Amplifier Application
MT6L56E	VHF-UHF Band Low Noise Amplifier Application
MT6L57AE	VHF-UHF Band Low Noise Amplifier Application
MT6L57AFS	VHF-UHF Band Low Noise Amplifier Application

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AT MT6L58AT VHF~UHF Band Low Noise Amplifier Applications • Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6 Mounted Devices Three-pins (SSM/TESM) mold products are corresponded. Q1: SSM (TESM) MT3S06S (MT3S06T) Q2: SSM (TESM) MT3S03AS (MT3S03AT) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol Q1 Q2 Unit VCBO VCEO VEBO IC IB PC Tj Tstg 10 10 V 5 5 V 1.5 2 V 15 40 mA 7 10 mA 150 mW 125 °C −55~125 °C Marking JEDEC ― JEITA ― TOSHIBA 2-2JA1C Weight: 0.0045 g (typ.