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RN1210,RN1211
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1210,RN1211
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2210, RN2211 Unit: mm
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 5 100 300 150 −55~150 Unit V V V mA mW °C °C
JEDEC EIAJ TOSHIBA Weight: 0.
RN1211 Datasheet
