Datasheet Summary
RN1210,RN1211
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1210,RN1211
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l plementary to RN2210, RN2211 Unit: mm
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 5 100 300 150
- 55~150 Unit V V V mA mW °C °C
JEDEC EIAJ TOSHIBA Weight: 0.13g
― ― 2-4E1A
Electric...