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Toshiba Electronic Components Datasheet

RN1313 Datasheet

(RN1312 / RN1313) Interface Circuit And Driver Circuit Applications

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RN1313 pdf
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RN1312,RN1313
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1312,RN1313
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2312, RN2313
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
50
50
5
100
100
150
125
55~125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
EIAJ
TOSHIBA
Weight: 0.006g
SC-70
2-2E1A
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN1312
RN1313
Symbol
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
R1
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 1mA
IC = 5mA, IB = 0.25mA
VCE = 10V, IC = 5mA
VCB = 10V, IE = 0, f = 1MHz

Min Typ.
120
15.4
32.9
0.1
250
3
22
47
Max
100
100
700
0.3
6
28.6
61.1
Unit
nA
nA
V
MHz
pF
k
1 2001-06-07


Toshiba Electronic Components Datasheet

RN1313 Datasheet

(RN1312 / RN1313) Interface Circuit And Driver Circuit Applications

No Preview Available !

RN1313 pdf
www.DataSheet4U.com
RN1312,RN1313
2 2001-06-07


Part Number RN1313
Description (RN1312 / RN1313) Interface Circuit And Driver Circuit Applications
Maker Toshiba Semiconductor
Total Page 5 Pages
PDF Download
RN1313 pdf
RN1313 Datasheet PDF
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