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Toshiba Electronic Components Datasheet

RN1317 Datasheet

(RN1314 - RN1318) TOSHIBA Transistor Silicon NPN Epitaxial Type

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RN1314~RN1318
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1314,RN1315,RN1316
RN1317,RN1318
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2314~RN2318
Equivalent Circuit and Bias Resister Values
Type No.
RN1314
RN1315
RN1316
RN1317
RN1318
R1 (k)
1
2.2
4.7
10
47
R2 (k)
10
10
10
4.7
10
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1314~1318
RN1314
RN1315
RN1316
RN1317
RN1318
RN1314~1318
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
50
50
5
6
7
15
25
100
100
150
55~150
JEDEC
EIAJ
TOSHIBA
Weight: 0.006g
SC-70
2-2E1A
Unit
V
V
V
mA
mW
°C
°C
1 2001-06-07


Toshiba Electronic Components Datasheet

RN1317 Datasheet

(RN1314 - RN1318) TOSHIBA Transistor Silicon NPN Epitaxial Type

No Preview Available !

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Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off
current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector Output
capacitance
Input resistor
Resistor ratio
RN1314~1318
RN1314~1318
RN1314
RN1315
RN1316
RN1317
RN1318
RN1314~16,18
RN1317
RN1314~1318
RN1314
RN1315
RN1316
RN1317
RN1318
RN1314
RN1315
RN1316
RN1317
RN1318
RN1314~1318
RN1314~1318
RN1314
RN1315
RN1316
RN1317
RN1318
RN1314
RN1315
RN1316
RN1317
RN1318
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 5V, IC = 0
VEB = 6V, IC = 0
VEB = 7V, IC = 0
VEB = 15V, IC = 0
VEB = 25V, IC = 0
VCE = 5V, IC = 10mA
IC = 5mA, IB = 0.25mA
VCE = 0.2V, IC = 5mA
VCE = 5V, IC = 0.1mA
VCE = 10V, IC = 5mA
fV=CB1M= H1z0V, IE = 0,
――
――
RN1314~RN1318
Min
0.35
0.37
0.36
0.78
0.33
50
30
0.6
0.7
0.8
1.5
2.5
0.3
0.3
0.3
0.3
0.5
0.7
1.54
3.29
7.0
32.9
Typ.
0.1
250
3.0
1.0
2.2
4.7
10.0
47.0
0.1
0.22
0.47
2.13
4.7
Max Unit
100
500
0.65
0.71
0.68
1.46
0.63
nA
nA
mA
0.3 V
2.0
2.5
2.5
3.5
10.0
0.9
1.0
1.1
2.3
5.7
V
V
MHz
6.0 pF
1.3
2.86
6.11
13.0
61.1
k
2 2001-06-07


Part Number RN1317
Description (RN1314 - RN1318) TOSHIBA Transistor Silicon NPN Epitaxial Type
Maker Toshiba Semiconductor
Total Page 8 Pages
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