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Toshiba Electronic Components Datasheet

RN1421 Datasheet

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

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RN1421 pdf
RN1421~RN1427
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1421,RN1422,RN1423,RN1424
RN1425,RN1426,RN1427
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l High current type (IC (max) = 800mA)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Low VCE (sat)
l Complementary to RN2401~RN2406
Equivalent Circuit and Bias Resister Values
Type No.
RN1421
RN1422
RN1423
RN1424
RN1425
RN1426
RN1427
R1 (k)
1
2.2
4.7
10
0.47
1
2.2
R2 (k)
1
2.2
4.7
10
10
10
10
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN1421~1427
RN1421~1424
RN1425, 1426
RN1427
RN1421~1427
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Rating
50
50
10
5
6
800
200
150
55~150
JEDEC
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.)
Unit
V
V
V
mA
mW
°C
°C
1 2002-02-08


Toshiba Electronic Components Datasheet

RN1421 Datasheet

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

No Preview Available !

RN1421 pdf
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off
current
RN1421~1427
RN1421
RN1422
Emitter cut-off current
RN1423
RN1424
RN1425
RN1426
RN1427
RN1421
DC current gain
RN1422
RN1423
RN1424
RN1425
RN1426
RN1427
Collector-emitter
saturation voltage
RN1421~1427
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector Output
capacitance
Input resistor
Resistor ratio
RN1421
RN1422
RN1423
RN1424
RN1425
RN1426
RN1427
RN1421~1424
RN1425, 1426
RN1427
RN1421~1427
RN1421~1427
RN1421
RN1422
RN1423
RN1424
RN1425
RN1426
RN1427
RN1421~1424
RN1425
RN1426
RN1427
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 10V, IC = 0
VEB = 5V, IC = 0
VEB = 6V, IC = 0
VCE = 1V, IC = 100mA
IC = 50mA, IB = 2mA
IC = 50mA, IB = 1mA
 VCE = 0.2V, IC = 100mA
 VCE = 5V, IC = 0.1mA
 VCE = 5V, IC = 20mA
 Vf =CB1M= H1z0V, IE = 0,


2
RN1421~RN1427
Min Typ. Max Unit
― ― 100
nA
 500
3.85 7.14
1.75 3.25
0.82 1.52
0.38 0.71 mA
0.365 0.682
0.35 0.65
0.378 0.703
60 ― ―
65 ― ―
70 ― ―
90 ― ― ―
90 ― ―
90 ― ―
90 ― ―
0.25
V
1.0
3.5
1.4 4.5
2.0 6.5
3.0 12.0 V
0.6 2.0
0.7 2.5
1.0 3.0
0.8 1.3
0.4 0.8 V
0.5  1.0
 300
MHz
 7
 pF
0.7 1.0 1.3
1.54 2.2 2.86
3.29 4.7 6.11
7 10 13
0.329 0.47 0.61
0.7 1.0 1.3
1.54 2.2 2.86
0.9 1.0 1.1
0.0423 0.047 0.0517
0.09 0.1 0.11
0.2 0.22 0.24
k

2002-02-08


Part Number RN1421
Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Maker Toshiba Semiconductor
Total Page 8 Pages
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RN1421 pdf
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