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Toshiba Electronic Components Datasheet

RN1907 Datasheet

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

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RN1907~RN1909
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1907,RN1908,RN1909
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
l Including two devices in US6 (ultra super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN2907~RN2909
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k)
RN1907
RN1908
RN1909
10
22
47
R2 (k)
47
47
22
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
2-2J1A
Equivalent Circuit (Top View)
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
*: Total rating
RN1907~1909
RN1907
RN1908
RN1909
RN1907~1909
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
Rating
50
50
6
7
15
100
200
150
55~150
Unit
V
V
V
mA
mW
°C
°C
1 2001-06-07


Toshiba Electronic Components Datasheet

RN1907 Datasheet

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

No Preview Available !

RN1907~RN1909
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector cut-off current
RN1907~1909
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Translation frequency
RN1907
RN1908
RN1909
RN1907
RN1908
RN1909
RN1907~1909
RN1907
RN1908
RN1909
RN1907
RN1908
RN1909
RN1907~1909
Collector output capacitance RN1907~1909
Input resistor
Resistor ratio
RN1907
RN1908
RN1909
RN1907
RN1908
RN1909
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VEB = 7V, IC = 0
VEB = 15V, IC = 0
VCE = 5V, IC = 10mA
Min Typ. Max
― ― 100
― ― 500
0.081 0.15
0.078 0.145
0.167 0.311
80 ― ―
80 ― ―
70 ― ―
Unit
nA
nA
mA
IC = 5mA, IB = 0.25mA
0.1 0.3
V
0.7 1.8
VCE = 0.2V, IC = 5mA 1.0 2.6 V
2.2 5.8
0.5 1.0
VCE = 5V, IC = 0.1mA 0.6
1.16
V
1.5 2.6
VCE = 10V, IC = 5mA 250 MHz
VCB = 10V, IE = 0,
f = 1MHz
3
6 pF
7 10 13
― ― 15.4 22 28.6 k
32.9 47 61.1
0.191 0.213 0.232
― ― 0.421 0.468 0.515
1.92 2.14 2.35
2 2001-06-07


Part Number RN1907
Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Maker Toshiba Semiconductor
Total Page 6 Pages
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3 RN1909 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
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