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Toshiba Electronic Components Datasheet

RN2010 Datasheet

Silicon PNP Epitaxial Type Transistor

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RN2010,RN2011
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2010,RN2011
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN1010, RN1011
Unit: mm
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC*
Tj
Tstg
Rating
50
50
5
100
400
150
55~150
Unit
V
V
V
mA
mW
°C
°C
JEDEC
TO92
JEITA
SC43
TOSHIBA
25F1B
Weight: 0.21g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN2010
RN2011
Symbol
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VEB = 5V, IC = 0
VCE = 5V, IC = 1mA
IC = 5mA, IB = 0.25mA
VCE = 10V, IC = 5mA
VCB = 10V, IE = 0, f = 1MHz
R1
1
Min Typ. Max Unit
― ― −100 nA
― ― −100 nA
120 400
― −0.1 0.3 V
200 MHz
3
6 pF
3.29 4.7 6.11
kΩ
7 10 13
2007-11-01


Toshiba Electronic Components Datasheet

RN2010 Datasheet

Silicon PNP Epitaxial Type Transistor

No Preview Available !

RN2010,RN2011
2 2007-11-01


Part Number RN2010
Description Silicon PNP Epitaxial Type Transistor
Maker Toshiba Semiconductor
Total Page 4 Pages
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1 RN2010 Silicon PNP Epitaxial Type Transistor
Toshiba Semiconductor
2 RN2011 Silicon PNP Epitaxial Type Transistor
Toshiba Semiconductor





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