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Toshiba Electronic Components Datasheet

RN2207 Datasheet

Silicon PNP Epitaxial Type Transistor

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RN2207~RN2209
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2207,RN2208,RN2209
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN1207~RN1209
Equivalent Circuit and Bias Resistor Values
Type No. R1 (k)
RN2207
RN2208
RN2209
10
22
47
R2 (k)
47
47
22
Absolute Maximum Ratings (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
2-4E1A
Weight: 0.13g (typ.)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2207
RN2208
RN2209
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
50
50
6
7
15
100
300
150
55~150
V
V
V
mA
mW
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2007-11-01


Toshiba Electronic Components Datasheet

RN2207 Datasheet

Silicon PNP Epitaxial Type Transistor

No Preview Available !

Electrical Characteristics (Ta = 25°C)
Characteristic
Collector cut-off current
RN2207
Emitter cut-off current
RN2208
RN2209
RN2207
DC current gain
RN2208
RN2209
Collector-emitter saturation voltage
RN2207
Input voltage (ON)
RN2208
RN2209
RN2207
Input voltage (OFF)
RN2208
RN2209
Translation frequency
Collector output capacitance
Input resistor
Resistor ratio
RN2207
RN2208
RN2209
RN2207
RN2208
RN2209
Symbol
ICBO
ICEO
IEBO
hFE
VCE (sat)
VI (ON)
VI (OFF)
fT
Cob
R1
R1/R2
Test
Circuit
Test Condition
VCB = 50V, IE = 0
VCE = 50V, IB = 0
VEB = 6V, IC = 0
VEB = 7V, IC = 0
VEB = 15V, IC = 0
VCE = 5V, IC = 10mA
IC = 5mA, IB = 0.25mA
VCE = 0.2V, IC = 5mA
VCE = 5V, IC = 0.1mA
VCE = 10V, IC = 5mA
VCB = 10V, IE = 0,
f = 1MHz
――
――
RN2207~RN2209
Min Typ. Max Unit
― ― −100
nA
― ― −500
0.081 ― −0.15
0.078 ― −0.145 mA
0.167 ― −0.311
80 ― ―
80 ― ― ―
70 ― ―
― −0.1 0.3 V
0.7 ― −1.8
1.0 ― −2.6 V
2.2 ― −5.8
0.5 ― −1.0
0.6 ― −1.16 V
1.5 ― −2.6
200 MHz
3
6 pF
7
15.4
32.9
0.191
0.421
1.92
10
22
47
0.213
0.468
2.14
13
28.6
61.1
0.232
0.515
2.35
k
2 2007-11-01


Part Number RN2207
Description Silicon PNP Epitaxial Type Transistor
Maker Toshiba Semiconductor
Total Page 5 Pages
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