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S-AU81 Datasheet RF Power Amplifier Module

Manufacturer: Toshiba

Overview

www.DataSheet4U.com S-AU81 RF Power Amplifier Module S-AU81 Power Amplifier Modules for Domestic cdmaOne · · · · · GaAs HBT Micro PA (on-chip bias circuit and matching circuit) Output power: Po = 27.0dBmW (min) Gain: Gp = 28.0dB (typ.) Total current: It (1) = 385 mA (typ.) (@Pout = 27.0dBmW) Low-voltage operation: Operation at VCC = 1.5 V is possible It (2) = 97 mA (typ) (@Pout = 14dBmW, VCC = 1.

Key Features

  • an output control pin which can be switched between low-power and high-power settings. It = 90 mA (typ. ) (@Pout = 14dBmW, VCC = 2.70 V) Unit: mm.
  • JEDEC JEITA.