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Toshiba Electronic Components Datasheet

SF10G41A Datasheet

SILICON PLANAR TYPE THYRISTOR

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SF10G41A,SF10J41A
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF10G41A,SF10J41A
MEDIUM POWER CONTROL APPLICATIONS
Unit: mm
l Repetitive Peak OffState Voltage : VDRM = 400,600V
Repetitive Peak Reverse Voltage : VRRM = 400,600V
l Average OnState Current
: IT (AV) = 10A
l Gate Trigger Current
: IGT = 15mA (Max.)
MAXIMUM RATINGS
CHARACTERISTIC
Repetitive Peak
OffState Voltage and
Repetitive Peak
Reverse Voltage
SF10G41A
SF10J41A
NonRepetitive Peak
Reverse Voltage
(Non-Repetitive<5ms,
Tj = 0~125°C)
SF10G41A
SF10J41A
Average OnState Current
(Half Sine Waveform Tc = 79°C)
R.M.S OnState Current
Peak One Cycle Surge On-State
Current (Non-Repetitive)
I2t Limit Value
Critical Rate of Rise of On-State
Curret
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
SYMBOL
VDRM
VRRM
VRSM
IT (AV)
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
VRGM
IGM
Tj
Tstg
RATING
400
600
500
720
10
16
160 (50Hz)
176 (60Hz)
125
100
5
0.5
10
5
2
40~125
40~125
UNIT
V
V
A
A
A
A2s
A / µs
W
W
V
V
A
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 2g
TO220AB
SC46
1310G1B
1 2001-07-10


Toshiba Electronic Components Datasheet

SF10G41A Datasheet

SILICON PLANAR TYPE THYRISTOR

No Preview Available !

www.DataSheet4U.com
SF10G41A,SF10J41A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak OffState Current and
Repetitive Peak Reverse Current
Peak OnState Voltage
Gate Trigger Voltage
Gate Trigger Current
Gate NonTrigger Voltage
Critical Rate of Rise of OffState Voltage
Holding Current
Latching Current
Thermal Resistance
SYMBOL
TEST CONDITION
IDRM
IRRM
VTM
VGT
IGT
VGD
dv / dt
IH
IL
Rth (jc)
VDRM = VRRM = Rated
ITM = 30A
VD = 6V, RL = 10
VD = Rated × 2 / 3, Tc = 125°C
VDRM = Rated × 2 / 3, Tc = 125°C
Exponential Rise
VD = 6V, ITM = 1A
VD = 6V, f = 50Hz, tgw = 50µS, iG = 30mA
Junction to Case
MIN MAX UNIT
10 µA
1.6
V
1.0
V
15 mA
0.2
V
100 V / µs
40 mA
60 mA
2.0 °C / W
MARKING
NUMBER
*1
*2
TYPE
SYMBOL
SF10G41A
SF10J41A
SF10G41A, SF10J41A
MARK
SF10G41
SF10J41
A
Example
*3
8A : January 1998
8B : February 1998
8L : December 1998
2 2001-07-10


Part Number SF10G41A
Description SILICON PLANAR TYPE THYRISTOR
Maker Toshiba Semiconductor
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SF10G41A Datasheet PDF






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Toshiba Semiconductor





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