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SF10G48,SF10J48,USF10G48,USF10J48
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
Off−State Voltage and
Repetitive Peak
Reverse Voltage
SF10G48
USF10G48
SF10J48
USF10J48
Non−Repetitive Peak
Reverse Voltage
(Non−Repetitive <5ms,
Tj = 0~125°C)
SF10G48
USF10G48
SF10J48
USF10J48
Average On−State Current
R.M.S On−State Current
Peak One Cycle Surge On−State
Current (Non-Repetitive)
I2t Limit Value
Critical Rate of Rise of On−State
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
VDRM
VRRM
VRSM
IT (AV)
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
VRGM
IGM
Tj
Tstg
400
600
500
720
10
16
160 (50Hz)
176 (60Hz)
125
100
5
0.5
10
−5
2
−40~125
−40~125
V
V
A
A
A
A2s
A / µs
W
W
V
V
A
°C
°C
Note 1: VDRM = 0.5 × Rated, ITM ≤ 30A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off−State Current and
Repetitive Peak Reverse Current
Peak On−State Voltage
Gate Trigger Voltage
Gate Trigger Current
Gate Non−Trigger Voltage
Critical Rate of Rise of Off−State Voltage
Holding Current
Latching Current
Thermal Resistance
SYMBOL
TEST CONDITION
IDRM
IRRM
VTM
VGT
IGT
VGD
dv /dt
IH
IL
Rth (j−c)
VDRM = VRRM = Rated
ITM = 30A
VD = 6V, RL = 10Ω
VD = Rated × 2 / 3, Tc = 125°C
VDRM = Rated, Tc = 125°C
Exponential Rise
VD = 6V, ITM = 1A
VD = 6V, f = 50Hz
tgw = 50µs, iG = 30mA
Junction to Case, DC
MIN TYP. MAX UNIT
― ― 10 µA
― 1.5 V
― ― 1.0 V
― ― 10 mA
0.2 ― ― V
― 50 ― V / µs
― ― 40 mA
― ― 50 mA
― ― 2.5 °C / W
2 2001-07-10
