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Toshiba Electronic Components Datasheet

SF10J48 Datasheet

SILICON PLANAR TYPE THYRISTOR

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SF10G48,SF10J48,USF10G48,USF10J48
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF10G48,SF10J48,USF10G48,USF10J48
MEDIUM POWER CONTROL APPLICATIONS
l Repetitive Peak OffState Voltage : VDRM = 400,600V
l Repetitive Peak Reverse Voltage : VRRM = 400,600V
l Average OnState Current
: IT (AV) = 10A
l Gate Trigger Current
: IGT = 10mA MAX.
SF10G48·SF10J48
USF10G48·USF10J48
Unit: mm
JEDEC
JEITA
TOSHIBA
MARKING
1310J1B
*1
JEDEC
JEITA
TOSHIBA
MARK
F10G48
F10J48
1310J2B
Weight: 1.7g
TYPE
NAME
SF10G48, USF10G48
ASF10J48, USF10J48
*2
1 2001-07-10


Toshiba Electronic Components Datasheet

SF10J48 Datasheet

SILICON PLANAR TYPE THYRISTOR

No Preview Available !

www.DataSheet4U.com
SF10G48,SF10J48,USF10G48,USF10J48
MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak
OffState Voltage and
Repetitive Peak
Reverse Voltage
SF10G48
USF10G48
SF10J48
USF10J48
NonRepetitive Peak
Reverse Voltage
(NonRepetitive <5ms,
Tj = 0~125°C)
SF10G48
USF10G48
SF10J48
USF10J48
Average OnState Current
R.M.S OnState Current
Peak One Cycle Surge OnState
Current (Non-Repetitive)
I2t Limit Value
Critical Rate of Rise of OnState
Current
(Note 1)
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Forward Gate Voltage
Peak Reverse Gate Voltage
Peak Forward Gate Current
Junction Temperature
Storage Temperature Range
VDRM
VRRM
VRSM
IT (AV)
IT (RMS)
ITSM
I2t
di / dt
PGM
PG (AV)
VFGM
VRGM
IGM
Tj
Tstg
400
600
500
720
10
16
160 (50Hz)
176 (60Hz)
125
100
5
0.5
10
5
2
40~125
40~125
V
V
A
A
A
A2s
A / µs
W
W
V
V
A
°C
°C
Note 1: VDRM = 0.5 × Rated, ITM 30A, tgw 10µs, tgr 250ns, igp = IGT × 2.0
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak OffState Current and
Repetitive Peak Reverse Current
Peak OnState Voltage
Gate Trigger Voltage
Gate Trigger Current
Gate NonTrigger Voltage
Critical Rate of Rise of OffState Voltage
Holding Current
Latching Current
Thermal Resistance
SYMBOL
TEST CONDITION
IDRM
IRRM
VTM
VGT
IGT
VGD
dv /dt
IH
IL
Rth (jc)
VDRM = VRRM = Rated
ITM = 30A
VD = 6V, RL = 10
VD = Rated × 2 / 3, Tc = 125°C
VDRM = Rated, Tc = 125°C
Exponential Rise
VD = 6V, ITM = 1A
VD = 6V, f = 50Hz
tgw = 50µs, iG = 30mA
Junction to Case, DC
MIN TYP. MAX UNIT
― ― 10 µA
1.5 V
― ― 1.0 V
― ― 10 mA
0.2 ― ― V
50 V / µs
― ― 40 mA
― ― 50 mA
― ― 2.5 °C / W
2 2001-07-10


Part Number SF10J48
Description SILICON PLANAR TYPE THYRISTOR
Maker Toshiba Semiconductor
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SF10J48 Datasheet PDF






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