SF8JZ47 Datasheet | Toshiba

SF8GZ47,SF8JZ47 TOSHIBA THYRISITOR SILICON PLANAR TYPE SF8GZ47,SF8JZ47 MEDIUM POWER CONTROL APPLICATIONS l Repetitive Peak off- State Voltage Repetitive Peak Reverse Voltage l Average On- State Current l Isolation Voltage : VDRM = 400, 600V : VRRM = 400, 600V : IT (AV) = 8A : VIsol = 1500V AC Unit: mm MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off- State Voltage and Repetitive Peak6 Reverse Voltage Non- Repetitive Peak Reverse Voltage (Non- Repetitive <5ms, Tj = 0~125°C) SF8GZ47 SF8JZ47 SF8GZ47 SF8JZ47 VRSM SYMBOL VDRM VRRM RATING 400 600 500 720 8 12.6 120 (50 Hz) 132 (60 Hz) 72 100 5 0.5 10 - 5 2 - 40~125 - 40~125 1500 V V UNIT Average On- State Current (Half Sine Waveform Tc = 72°C) R.M.S On- State Current Peak One Cycle Surge On- State Current (Non- Repetitive) I t Limit Value Critical Rate of Rise of On- State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range Isolation Voltage (AC, t = 1 min.) IT (AV) IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM VRGM IGM Tj Tstg VISOL A A A A s A / µs W W V V A °C °C V JEDEC JEITA TOSHIBA Weight: 1.7g ― ― 13- 10H1B Note 1: di / dt test condition, VDRM = 0.5 × Rated, ITM ≤ 25A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0 2001-07-13 SF8GZ47,SF8JZ47 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off- State Current and Repetitive Peak Reverse Current Peak On- State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non- Trigger Voltage Critical Rate of Rise of Off- State Voltage Holding Current Latching Current Thermal Resistance SYMBOL IDRM IRRM VTM VGT IGT VGD dv / dt IH IL Rth (j- c) TEST CONDITION VDRM = VRRM = Rated ITM = 25 A VD = 6 V, RL = 10 Ω VD = Rated × 2 / 3, Tc = 125°C VDRM = Rated, Tc = 125°C Exponential Rise VD = 6 V, ITM = 1 A VD = 6 V, f = 50Hz, tgw = 50 µs, i G = 30 m A Junction to Case MIN ― ― ― ― 0.2 ― ― ― ― TYP. ― ― ― ― ― 50 ― ― ― MAX 10...