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SSM3J117TU - Silicon P-Channel MOSFET

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SSM3J117TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU DC-DC converter Applications High-Speed Switching Applications • 4 V drive • Low ON-resistance: RDS(ON) = 225 mΩ (max) (@VGS = −4 V) RDS(ON) = 117 mΩ (max) (@VGS = −10 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage Gate–source voltage Drain current DC Pulse Power dissipation Channel temperature Storage temperature range VDS −30 V VGSS ±20 V ID −2 A IDP −4 PD (Note 1) 800 mW PD (Note 2) 500 Tch 150 °C Tstg −55 to 150 °C Note: Note 1: Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
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