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SSM3J120TU - Silicon P-Channel MOSFET

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SSM3J120TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J120TU ○ Power Management Switch Applications ○ High-Current Switching Applications • 1.5 V drive • Low on-resistance Ron = 140 mΩ (max) (@VGS = -1.5 V) Ron = 78 mΩ (max) (@VGS = -1.8 V) Ron = 49 mΩ (max) (@VGS = -2.5 V) Ron = 38 mΩ (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit 2.0±0.1 0.65±0.05 Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 1 2 3 0.166±0.05 Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ±8 V Drain current DC ID Pulse IDP -4.0 A -8.0 Drain power dissipation PD (Note 1) 800 mW PD (Note 2) 500 Channel temperature Storage temperature Tch 150 °C Tstg −55~150 °C 0.7±0.05 UFM 1. Gate 2. Source 3.
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