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SSM3J36MFV - Silicon P-Channel MOSFET

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SSM3J36MFV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J36MFV ○ Power Management Switches • • 1.5-V drive Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) : Ron = 2.70 Ω (max) (@VGS = -1.8 V) : Ron = 1.60 Ω (max) (@VGS = -2.8 V) : Ron = 1.31 Ω (max) (@VGS = -4.5 V) Unit: mm 0.22±0.05 1.2±0.05 Absolute Maximum Ratings (Ta = 25 °C) 1.2±0.05 0.8±0.05 Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note1) Tch Tstg Rating -20 ±8 -330 -660 150 150 −55 to 150 Unit V V 0.4 1 2 3 mW °C °C 0.5±0.05 1. Gate Source Note: Using continuously under heavy loads (e.g.
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