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SSM3K35FS - Silicon N-Channel MOSFET

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SSM3K35FS TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35FS ○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2-V drive • Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ±10 V Drain current DC ID Pulse IDP 180 mA 360 Drain power dissipation PD 100 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C JEDEC - Note: Using continuously under heavy loads (e.g.
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