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SSM3K36FS - Silicon N-Channel MOSFET

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SSM3K36FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K36FS ○ High-Speed Switching Applications • 1.5-V drive • Low ON-resistance : Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V) Unit: mm Absolute Maximum Ratings (Ta = 25 °C) Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS ± 10 V Drain current DC ID 500 mA Pulse IDP 1000 Drain power dissipation PD (Note 1) 150 mW Channel temperature Storage temperature range Tch 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.g.
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